Three Generations of SuperFlash Technology

SuperFlash® memory cell was originally invented by Bing Yeh, SST's founder. The memory cell has evolved beyond the first generation, enhancing the scaling of the cell from 1mm technology node to 65nm and smaller geometry. Through scaling and evolution, the memory cell retains its split-gate structure, poly-to-poly Fowler-Nordheim (FN) tunneling erase, and Source-Side Hot Channel Electron (SS HCE) injection programming.

The table below illustrates and describes the three generations of SuperFlash cell.

 

 

 
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